[2002]Thin Solid Films 2002, 415(1-2), 303-307 (IF = 1.761)

Change_in_Quantum_Efficiency_due_to_Relative_Thickness_Variation_of_Hole_Transport_and_Emitting_Layers_in_a_Self_Assembled_Device

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“Change in Quantum Efficiency due to Relative Thickness Variation of Hole Transport and Emitting Layers in a Self-Assembled Device”

Jinhan Cho, Kookheon Char and Dong Young Kim,

Thin Solid Films, 2002, 415(1-2), 303-307.

DOI: doi.org/10.1016/S0040-6090(02)00633-8
ISSN: 0040-6090

Publication Date (Web): 06 September 2002
Publication Date (Print): 01 August 2002

Supplementary Information: None.

Acknowledgments: This work was supported by the National Research Laboratory Fund (Grant number: M1-0104-00-0191) from the Ministry of Science and Technology (MOST) and by the Ministry of Education through the Brain Korea 21 Program at Seoul National University.